A DIELECTRIC CALCULATION OF ENERGY LOSS TO VALENCE ELECTRONS OF CHANNELLED PROTONS IN SILICON.DESALVO A; ROSA R.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 10; PP. 1595-1608; BIBL. 31 REF.Article

MULTIPLE SCATTERING AND CENTRAL LIMIT THEOREM: A MONTE CARLO APPROACH.DESALVO A; ROSA R.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 69; NO 1; PP. 71-78; ABS. FR.; BIBL. 22 REF.Article

Monte Carlo simulation of elastic and inelastic scattering of electrons in thin films. II: Core electron lossesDESALVO, A; ROSA, R.Journal of physics. D, Applied physics (Print). 1987, Vol 20, Num 6, pp 790-795, issn 0022-3727Article

FEEDING-IN AND BLOCKING PHENOMENA EXPLAINED IN TERMS OF A SIMPLE DIFFUSION MODEL.BAERI P; CARNERA A; DESALVO A et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 34; NO 4; PP. 223-230; BIBL. 15 REF.Article

A Monte Carlo simulation of precipitation phenomena in a diamond latticeDESALVO, A; RUANI, G.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1984, Vol 50, Num 4, pp 505-516, issn 0141-8637Article

LASER ANNEALING OF DAMAGED SILICON COVERED WITH A METAL FILM: TEST FOR EPITAXIAL GROWTH FROM THE MELTBENTINI GC; COHEN C; DESALVO A et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 2; PP. 156-159; BIBL. 12 REF.Article

APPLICATIONS OF MONTE CARLO TECHNIQUE TO THE ELECTRON PROBE MICROANALYSIS OF TERNARY SI-B-O FILMS ON SILICONARMIGLIATO A; DESALVO A; RINALDI R et al.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 8; PP. 1299-1308; BIBL. 17 REF.Article

EXPERIMENTAL AND COMPUTER ANALYSIS OF P⁺-ION PENETRATION TAILS IN A SIO₂-SI TWO-LAYER SYSTEMDESALVO A; GALLONI R; ROSA R et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 1994-1997; BIBL. 16 REF.Article

DETERMINATION OF COMPOSITION AND THICKNESS OF TIN_XOY FILMS ON SILICON BY COMBINED X-RAY AND NUCLEAR MICROANALYSISARMIGLIATO A; GARULLI A; ROSA R et al.1983; X-RAY SPECTROMETRY; ISSN 0049-8246; GBR; DA. 1983; VOL. 12; NO 1; PP. 38-41; BIBL. 17 REF.Article

CHANNELING FLUX IN SINGLE CRYSTALS WITH INTERSTITIAL ATOMS: IMPURITY CONCENTRATION DEPENDENCE.DELLA MEA G; DRIGO AV; LO RUSSO S et al.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 5; PP. 1836-1846; BIBL. 16 REF.Article

EFFECT OF LASER IRRADIATION ON THE CHARACTERISTICS OF IMPLANTED LAYERS FOR SILICON SOLAR CELLSZIGNANI F; GALLONI R; PEDULLI L et al.1979; PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. 2/1979/BERLIN; NLD/USA/GBR; DORDRECHT: D. REIDEL/BOSTON: D. REIDEL/LONDON: D. REIDEL; DA. 1979; PP. 213-221; BIBL. 9 REF.;_EUR-6376Conference Paper

Vectorized code for the spin-exchanged kinetic Ising model with nearest- and next-nearest-neighbour interactions in diamond latticeALBERTAZZI, E; DESALVO, A; ROSA, R et al.Computational materials science. 1993, Vol 1, Num 2, pp 135-143, issn 0927-0256Article

Vectorized code for the three-dimensional spin-exchange kinetic ising model on cubic and diamond latticesDESALVO, A; ERBACCI, G; ROSA, R et al.Computer physics communications. 1990, Vol 60, Num 3, pp 305-310, issn 0010-4655, 6 p.Article

Monte Carlo simulation of elastic and inelastic scattering of electrons in thin films. I: Valence electron lossesDESALVO, A; PARISINI, A; ROSA, R et al.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 12, pp 2455-2471, issn 0022-3727Article

Tail absorption in the determination of optical constants of silicon rich carbidesALLEGREZZA, M; GASPARI, F; CANINO, M et al.Thin solid films. 2014, Vol 556, pp 105-111, issn 0040-6090, 7 p.Article

Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour depositionGIORGIS, F; GIULIANI, F; PIRRI, C. F et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1998, Vol 77, Num 4, pp 925-944, issn 1364-2812Article

Low energy ion-beam post hydrogenation of phosphor implanted amorphous silicon filmsGALLONI, R; RUTH, M; DESALVO, A et al.Physica. B, Condensed matter. 1991, Vol 170, Num 1-4, pp 273-276, issn 0921-4526, 4 p.Conference Paper

Ultrathin μc-Si films deposited by PECVDRIZZOLI, R; SUMMONTE, C; PLA, J et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 7-10, issn 0040-6090Conference Paper

Plasma-enhanced chemical vapour deposition of microcrystalline silicon : on the dynamics of the amorphous-microcrystalline interface by optical methodsSUMMONTE, C; RIZZOLI, R; DESALVO, A et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2000, Vol 80, Num 4, pp 459-473, issn 1364-2812Conference Paper

Very high frequency hydrogen plasma treatment of growing surfaces: a study of the p-type amorphous to microcrystalline silicon transitionSUMMONTE, C; RIZZOLI, R; DESALVO, A et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 624-629, issn 0022-3093, 6 p., aConference Paper

Carrier confinement in a-Si_1-xN_x :H multilayer structures for increased light emissionRIZZOLI, R; SUMMONTE, C; RAVA, P et al.Advances in science and technology. 1999, pp 67-74, isbn 88-86538-28-6Conference Paper

Silicon heterojunction solar cells with p nanocrystalline thin emitter on monocrystalline substrateZIGNANI, F; DESALVO, A; CENTURIONI, E et al.Thin solid films. 2004, Vol 451-52, pp 350-354, issn 0040-6090, 5 p.Conference Paper

Open circuit voltage in homojunction and heterojunction silicon solar cells grown by VHF-PECVDRIZZOLI, R; CENTURIONI, E; PLA, J et al.Journal of non-crystalline solids. 2002, Vol 299302, pp 1203-1207, issn 0022-3093, bConference Paper

Silicon nanocrystals in carbide matrixSUMMONTE, C; ALLEGREZZA, M; PEIRO, F et al.Solar energy materials and solar cells. 2014, Vol 128, pp 138-149, issn 0927-0248, 12 p.Article

Photoluminescence and electroluminescence properties of a-Si_1-xN_x:H based superlattice structuresSUMMONTE, C; RIZZOLI, R; GALLONI, R et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1127-1131, issn 0022-3093, bConference Paper